fga25n120 igbt datasheet
Room service is an alternative if you fancy a meal or snack in your room. Once the booking has been made, the hotel will contact guests to organise advance, non-cancellable payment. An IGBT is a combination of MOSFET and BJT, as we can notice from its pin-out. Voltage from Gate to emitter maximum or VGE is 20V. Nature. 8600 Rockville Pike 5. This is because of the gate capacitance present on the input gate pin of IGBT. Hotel Catalonia Royal Bvaro - Adults Only, Hotel Catalonia Royal La Romana - Adults Only, Hotel Catalonia Royal Ses Estaques - Adults Only, Hotel Catalonia Royal Tulum - Adults Only, Hotel Catalonia Ses Estaques - Adults Only. The number 120 indicates that the IGBT has a collector emitter voltage of 1200V. High Voltage, high current switching device. 2022 Nov;18(11):1204-1213. doi: 10.1038/s41589-022-01110-7. Nulla consequat massa quis enim. For further information, fill in the form and we will contact you shortly. Chem. doi: 10.1038/nature08506. The hotel is close to important medical centres, such as the Teknon Clinic, Sant Jordi Clinic, Dexeus and Barraquer. Omrons new G5PZ-X PCB relay comes in a compact package with 20 A at 200 VDC rated load. NPT Trench Technology, Positive Temperature Coefficient, Extremely Enhanced Avalanche Capability, ON Semiconductor's proprietary trench design and, advanced NPT technology, the 1200V NPT IGBT offers, superior conduction and switching performances, high, avalanche ruggedness and easy parallel operation. A benchmark study of deep learning-based multi-omics data fusion methods for cancer. coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. Please enable it to take advantage of the complete set of features! 2023 Feb 8;145(5):2711-2732. doi: 10.1021/jacs.2c11098. Electrical Characteristics of the IGBT T. C = 25C unless otherwise noted. doi: 10.1093/nar/gkac1069. Once the gate is triggered the IGBT will remain on even after the trigger voltage is removed similar to a MOSFET. New Gen 7 Platform of 1200 V Hyperfast Rectifiers with Improved Technical Features for Industrial and Automotive Applications. Copyright 2023 Components101. 1-2W DC/DC converters feature compact size and reliable performance with SMD/DFN/SIP/DIP packages. Europe, Middle East and Africa Technical Support: Literature Distribution Center for ON Semiconductor, 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA, Phone: 3036752175 or 8003443860 Toll Free USA/Canada, Fax: 3036752176 or 8003443867 Toll Free USA/Canada, Order Literature: http://www.onsemi.com/orderlit, For additional information, please contact your local, Semiconductor Components Industries, LLC, 1200 V - 25 A - IGBT Application: Inverter. The PubMed wordmark and PubMed logo are registered trademarks of the U.S. Department of Health and Human Services (HHS). Bioactivity-guided mapping and navigation of chemical space. It was disappointing that for the price, not only could one not get a free cup of coffee, but the staff acted as though it was an imposition to provide some breakfast items even though I was paying. the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET. In addition to the Catalonia Barcelona 505 Hotel, you may be interested in other shopping hotels in Barcelona, hotels with a pool in Barcelona or hotels with a terrace in Barcelona. Semiconductor Components Industries, LLC. 1200 50A FGA25N120. The personal data you provide will be processed by the company Duques de Bergara, S.L.U, in order to manage any request for information without obligation in relation to our products or services. Curr Comput Aided Drug Des. The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions. This article will unlock more details about FGA25N120. It can further handle high pulse currents of upto 90A making suitable in application where high voltage and switching current spikes are involved. The LR44 is an Alkaline Zinc Manganese button cell battery, whereas, the 357 is a silver oxide button cell battery. Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. It can further handle high pulse currents of upto 45A making suitable in application where high voltage and switching current spikes are involved. Clipboard, Search History, and several other advanced features are temporarily unavailable. It can further handle high pulse currents of upto 45A making suitable in application where high voltage and switching current spikes are involved. Is this part okay, or recommendations? from Fairchild Semiconductor datasheet Fairchild Semiconductor FGA25N120 Series Datasheets. It also has a very low collector emitter saturation voltage of 1.9V and low switching losses. Ask about room service breakfast (surcharge applies). Monday to Sunday from 1.00 pm to 11.00 pm. IGBT are preferred in designs where high switching voltage and current is involved. Fig. The FGA15N120 is a high voltage IGBT with a Collector to Emitter voltage of 1200V and continuous collector current of 30A. Pool let you enjoy a relaxed dip while you take in the views of Barcelona. So if you design requires high efficiency and faster switching device then you should prefer MOSFETs over IGBT. An official website of the United States government. 2022 Aug 9;13:894209. doi: 10.3389/fgene.2022.894209. All the IGBT under this series features Non Punch Though (NPT) Technology hence it has very low switching loss and low saturation voltage making it feasible to be used in low voltage switching driver designs with comparatively high efficiency for its switching range. official website and that any information you provide is encrypted The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. Typical parameters which may be provided in ON Semiconductor data sheets and/or, specifications can and do vary in different applications and actual performance may vary over time. It has an interesting restaurant where guests can enjoy tasty international cuisine and 3large rooms for organising all kinds of events. This article will unlock more details about FGA25N120. 2019;116:1266012665. The needed gate trigger voltage can be estimated using the collector-emitter voltage and collector current that must be switched, using the graph in the datasheet shown below. The FGA15N120 is a high voltage IGBT, it can be used to switch high voltage values as high a 1200V with a current capability of 30A at 25C. FGA25N120 Datasheet, FGA25N120 datasheets, FGA25N120 pdf, FGA25N120 integrated circuits : ONSEMI - 1200 V, 25 A NPT Trench IGBT ,alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. Fig. The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. NOTE: Complete details can be found in the FGA15N120 IGBT Datasheet linked at the bottom of this page. The FGA25N120 is a high voltage high current IGBT, it can be used to switch high voltage values as high a 1200V with a current capability of 50A at 25C. Nucleic Acids Res. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver side designs. This fantastic hotel with outdoor poolis situated in the upper area of Barcelona, next to Park Gell and the Science Museum. FGA25N120AN: 926Kb / 6P: High speed switching Fairchild Semiconductor: FGA25N120AND: 567Kb / 8P: IGBT FGA25N120ANTD: 867Kb / 9P: 1200V NPT Trench IGBT The junior suite rooms are spacious and spacious, equipped with all the necessary amenities to make your stay at the hotel a perfect one. This fantastic hotel is situated in the upper area of Barcelona, next to Park Gell and the Science Museum. 1-2W DC/DC converters feature compact size and reliable performance with SMD/DFN/SIP/DIP packages. So due to this property, the collector to emitter voltage (VCE) exceeds the rated voltage then they do not collapse. USA. It features a comprehensive portfolio of power, signal management, and logic, custom solutions that are energy efficient. Rooms are big, the team is friendly and we are usually stay at this hotel. TheFGA25N120is a high voltage and high currentIGBTwith NPT Trench Technology. E Attachments FGA25N120AN.pdf 461.6 KB Views: 9 The 15N120 IGBTs have extended avalanche capability that is the IGBTs are immune to stray inductance problems. LR44 is an alkaline manganese battery. Sci. NOTE: Complete details can be found in the FGA25N120 IGBT Datasheet linked at the bottom of this page. Similar to MOSFET in IGBT also the gate pin has to be trigger with the minimum gate voltage to close the switch. The FGA25N120 is a high voltage high current IGBT, it can be used to switch high voltage values as high a 1200V with a current capability of 50A at 25C. How diverse are diversity assessment methods? IGBT NPT/TRENCH 1200V 50A TO3P. doi: 10.1016/1074-5521(95)90283-X. Fairchild Semi-conductors have a list of high voltage IGBTs under the FGAxxN120 series. LR44 Battery: Equivalent, Specifications and Replacements. Copyright 2023 Components101. Requests regarding bed options are subject to availability. Test Conditions. 2009 Aug;5(8):585-92. doi: 10.1038/nchembio.188. 2013 Jun;9(2):153-63. doi: 10.2174/1573409911309020002. Since it's the reverse current across a junction, IC exhibits a knee shaped rise, increasing rapidly once breakdown occurs. Manufacturer FGA25N120 Datasheet, PDF Search Partnumber : Match&Start with "FGA25N120" - Total : 12 ( 1/1 Page) 1 FGA25N120 Distributor 1N4002 Distributor More FGA25N120 Manufacturer Search Partnumber : Match&Start with "FGA25N120 " Total : 4 ( 1/1 Page) 1 Link URL LR44 vs. 357: Are LR44 and 357 cells interchangeable? There was noise when operating the air condition. It has Gate on the input side similar to a MOSFET and Collector and Emitter on the output side similar to a BJT. FGA25N120ANTD FGA25N120ANTD IGBT Transistor 1200V, 25A FGA25N120 induction heat resonant fast recovery diode 600v 5A HIGH VOLTAGE DIODE for microwave ovens igbt 1200V 40A igbt 600V IGBT 200A 1200V application induction heating 25C312. Furthermore, there are huge in stock. Bookshelf u-blox's SARA-R5 series modules offer long-term device availability and provide lifetime support. The Datasheet Archive. An identity check and valid credit card are required to check in. So, here IGBT in the circuit works as a switch to control these two loads. doi: 10.1016/j.drudis.2014.11.004. Booking not necessary. Also, they provide no wash cloths, so we had to use bath-size towels instead. The IGBT can switch 1200V with a current rating of up to 50A. Advantech's WISE-750 vibration PHM gateway is developed to perform predictive maintenance. In comparison to MOSFETs, the FGA25N, like all IGBTs, has a slow switching speed and a significant voltage drop across the collector and emitter. On Semiconductor (Nasdaq: ON) is a manufacturer engaging itself in reducing energy use. Microchip's PolarFire is a low-power, multi-core RISC-V SoC FPGA, Taoglas antennas ensure high quality and seamless time-to-market execution for IoT products. Supplement of 22night/animal and 200 deposit. It acts as a world-class supply chain with high reliability and a network of manufacturing facilities, sales, offices, and design centres in key markets through North America, Europe, and the Asia Pacific regions. nPM1300 - New Power Management IC for Advanced Wearables and Portable Electronics, Onsemi Introduces New 1700V Silicon Carbide MOSFET and Schottky Diodes for Energy Infrastructure and Industrial Applications, High Voltage High Current IGBT with low saturation voltage, Minimum Gate threshold voltage (VGE) is 3.5V, Maximum Gate threshold voltage (VGE) is 7.5V, Gate-Emitter Voltage is (VGE) is 20V (max). 25 A NPT Trench IGBT FGA25N120ANTDTU. Distributor Manufacturer FGA25N120 Datasheet, PDF Search Partnumber : Match&Start with "FGA25N120" - Total : 12 ( 1/1 Page) 1 CR2450 vs. CR2032: Are they interchangeable? To turn off the device the gate capacitance has to be discharged by simply connecting the gate pin of IGBT to ground. Equivalent FGA15N120 IGBTs are; FGA180N33ATD, FGA15N120ANTDTU_F109, FGA20S120M, FGA25N120ANTD, FGA25N120FTD, . It acts as a world-class supply chain with high reliability and a network of manufacturing facilities, sales, offices, and design centres in key markets through North America, Europe, and the Asia Pacific regions. Moreover, we implement a battery of signature-activity relationship (SigAR) models and show a substantial improvement in performance, with respect to chemistry-based classifiers, across a series of biophysics and physiology activity prediction benchmarks. MoleculeNet benchmarks, comparing the predictive power of CC signatures with a classical MFp-based, MeSH the above were all associated with Induction Coil, IGBT driving circuits. Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages. Zhao H, Yang Y, Wang S, Yang X, Zhou K, Xu C, Zhang X, Fan J, Hou D, Li X, Lin H, Tan Y, Wang S, Chu XY, Zhuoma D, Zhang F, Ju D, Zeng X, Chen YZ. TE Relay Products offer a broad range of relays for application in many different markets. Where to use FGA25N120 IGBT? Here we present a collection of deep neural networks able to infer bioactivity signatures for any compound of interest, even when little or no experimental information is available for them. Search. The IGBT can switch 1200V with a current rating of upto 50A. Library enrichment to identify Snail1. All the IGBT under this series features Non Punch Though (NPT) Technology hence it has very low switching loss and low saturation voltage making it feasible to be used in low voltage switching driver designs with comparatively high efficiency for its switching range. Once the gate is triggered the IGBT will remain on even after the trigger voltage is removed similar to a MOSFET. Amphenol Communications Solutions high-speed, plug and play I/O connector solutions support high speed data rates of 56G and higher. The FGA15N120 is a high voltage IGBT, it can be used to switch high voltage values as high a 1200V with a current capability of 30A at 25C. This article is going to cover the differences between STM32 and ESP32 from the perspective of description, Arduino, CAD Model, features, and more details. Once the gate terminal is activated then the IGBT will be activated even after the voltage is detached like a MOSFET due to the capacitance present at the gate terminal on the input. Fig. In FGA15N120 IGBT, the current rating is denoted after the prefix FGA, current rating is 15A at 125C and the last number like 120 specifies that the IGBT includes collector-emitter voltage (VCE) is 1200V. The .gov means its official. 1200 V, 25 A NPT Trench IGBT. FGA25N120 IGBT: Application, Datasheet, Pinout, FGA25N120FTD-Fairchild-Semiconductor-datasheet-8630906.pdf, FGA25N120FTD-Fairchild-Semiconductor-datasheet-10732717.pdf, Voltage - Collector Emitter Breakdown (Max). The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. ON Semiconductor FGA25N120FTD technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FGA25N120FTD. Large-scale bioactivity prediction using the signaturizers (~800k molecules). FGA25N120 NPT Trench IGBT Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Ask about room service breakfast (surcharge applies). W, My stay was satisfactory. In this circuit, the Insulated Gate Bipolar Transistor can be switched ON & OFF by activating the gate terminal. The features and specifications of FGA15N120 IGBT include the following. This is because the input gate pin of an IGBT has a gate capacitance. Nat. On the input side, it's comparable to a MOSFET, and on the output side, it's similar to a BJT, with Collector and Emitter. junction temperature, 1200 V - 25 A - IGBT Application: Inverter. -, Keiser MJ, et al. The triple rooms have comfortable spaces and amplios. So if you design requires high efficiency and faster switching device then you should prefer MOSFETs over IGBT. 30 May 2019 - 0 Comments. It can also withstand strong pulse currents of up to 90A, making it ideal for applications involving high voltage and switching current spikes. Transfer to and from airport/railway station. The FGA15N120 is a high voltage IGBT, it can be used to switch high voltage values as high a 1200V with a current capability of 30A at 25C. Methods Mol Biol. The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. Symbol. 2019;3:119128. When IGBT is used in switching circuits, care should be taken that it is not used in high frequency designs since the collector emitter voltage drop (switching loss) of the IGBT increase with increase in switching frequency. To turn off the device the gate capacitance has to be discharged by simply connecting the gate pin of IGBT to ground. IGBT 1200V 40A 310W TO3P. The hotel reserves the right to pre-authorise the credit card prior to the entry date.For bookings of more than 4 rooms or more than 8 nights, payment must be made in advance at this establishment. -, Gromski PS, Henson AB, Granda JM, Cronin L. How to explore chemical space using algorithms and automation. We also inform you that you have the right to access, rectify and delete your data, as well as other rights, as explained in the privacy policy which you can consult here. And more, huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Like a MOSFET, once the gate is triggered, the IGBT will stay on even if the trigger voltage is withdrawn. The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. ON Semiconductor FGA25N120FTD technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FGA25N120FTD. Rise time and fall time is about 20ns and 100ns respectively. A schematic would help. IGBT NPT/TRENCH 1200V 50A TO3P: 0: Bulk. Description 1200V NPT Trench IGBT FGA25N120ANTD Datasheet (HTML) - Fairchild Semiconductor Similar Part No. It also has a very low collector emitter saturation voltage of 1.9V and low switching losses. Download datasheets and manufacturer documentation for ON Semiconductor FGA25N120FTD. 2009;462:175181. To switch off the device, just connect the gate pin of the IGBT to the ground to discharge the gate capacitance. And more, huge range of Semiconductors, Capacitors, Resistors and ICs in stock. In enim justo, rhoncus ut, imperdiet a, venenatis vitae cruassant au chocolat. Omrons new G5PZ-X PCB relay comes in a compact package with 20 A at 200 VDC rated load. Disclaimer. The broad release of bioactivity data has prompted enriched representations of compounds, reaching beyond chemical structures and capturing their known biologic Advancing Targeted Protein Degradation via Multiomics Profiling and Artificial Intelligence. It is similar in MOSFET & BJT switching. Alternatives for FGA25N120 FGA15N120, TA49123, FGA180N33. ON Semiconductor does not convey any license under its patent rights nor the rights of others. dialogi: Utilising NLP With Chemical and Disease Similarities to Drive the Identification of Drug-Induced Liver Injury Literature. Because of this normally the Gate pin of IGBT is connected to ground though a pull down resistor of 10k or a gate driver IC like IR2104 is used. Because of this normally the Gate pin of IGBT is connected to ground though a pull down resistor of 10k or a gate driver IC like IR2104 is used. Because the IGBT employs Non-Punch Through (NPT) Technology, it has a low switching loss and low saturation voltage, allowing it to be employed in low voltage switching driver designs with a high switching efficiency. PMC The FGA25N120 is a high voltage high current IGBT, it can be used to switch high voltage values as high a 1200V with a current capability of 50A at 25C . Mittal A, Mohanty SK, Gautam V, Arora S, Saproo S, Gupta R, Sivakumar R, Garg P, Aggarwal A, Raghavachary P, Dixit NK, Singh VP, Mehta A, Tayal J, Naidu S, Sengupta D, Ahuja G. Nat Chem Biol. As a result, the Gate pin of an IGBT is usually linked to the ground through a 10kpull-down resistoror a gate driver IC such as theIR2104. Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare. Today. So IGBT uses the benefits of both the transistors. Rise time and fall time is about 60ns and 100ns respectively. Even when the Collector Emitter voltage exceeds the rated voltage they do not breakdown because of this property. #1 Sorry, no schematic, I'm contemplating switching a 90v, 3A DC motor. Located in the uptown area of Barcelona, in the Sant Gervasi neighbourhood, the Catalonia Barcelona 505 hotel has 3 function rooms that can hold up to 100 people for all types of events, from cocktails to conventions.READ MOREREAD MORE, Events and meetings at the Catalonia Barcelona 505. In any case, do not miss the chef's suggestions and save room for dessert. High Voltage, high current switching devise. Our signaturizers relate to bioactivities of 25 different types (including target profiles, cellular response and clinical outcomes) and can be used as drop-in replacements for chemical descriptors in day-to-day chemoinformatics tasks. I can repeat the experience or recommend it. Organise your work events and celebrations with friends and family at our hotel and make your event something special. . The material of the shell can be metal, plastic, glass or ceramic. The hotel is close to important medical centres, such as the Teknon Clinic, Sant Jordi Clinic, Dexeus and Barraquer. sharing sensitive information, make sure youre on a federal (1) Repetitive rating: Pulse width limited by max. FGA25N120 IGBT: Application, Datasheet, Pinout, S8050 NPN Silicon Transistors: Datasheet, Pinout and Equivalent. This article will introduce LR44 battery equivalents, specifications, applications, and compare LR44 with 357 Battery to let you make a difference. The 15N120 IGBTs have extended avalanche capability that is the IGBTs are immune to stray inductance problems. FGA25N120 IGBT. The 50&5 restaurant, in the Barcelona neighborhood of Sant Gervasi, preserves the essence of the sixties, when it was the prelude to the mythical Sala Bocaccio. We offer a selection of typical dishes and delicious tapas of local cuisine that you can enjoy with a glass of wine or a cocktail. Fairchild Semi-conductors have a list of high voltage IGBTs under the FGAxxN120 series. NOTE: Complete details can be found in the FGA25N120 IGBT Datasheet linked at the bottom of this page. Rise time and fall time is about 60ns and 100ns respectively. Signature-based analysis of compound collections. If you are a member of Catalonia Rewards you can make your reservation and enjoy some of your benefits as a member during your stay. The Catalonia Barcelona 505 is very well connected, close to two of the main roads in Barcelona, carrer Muntaner and Ronda de General Mitre. N. American Technical Support: 8002829855 Toll Free. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. All rights reserved, TL6150 Series Tact Switches with IP67 Rating. Seven days a week from 1.00 pm to 11.00 pm. If you are designing a PCB or Perf board with this component then the following picture from the 2N7000 Datasheet will be useful to know its package type and dimensions. Epub 2009 Jun 28. An IGBT is a combination of MOSFET and BJT, as we can notice from its pin-out. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized, application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and, expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such, claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. This indicates that an IGBT is simply a MOSFET coupled with BJT on its output side to utilize the merits of a MOFET and BJT. 4. In this article, we will discuss whether CR2450 and CR2032 are interchangeable. Pin Description FGA25N120 CAD Model Symbol FGA25N120 Symbol Footprint FGA25N120 Footprint 3D Model FGA25N120 3D Model FGA25N120 Description The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. MoleculeNet benchmarks, comparing the predictive, Fig. Artificial intelligence uncovers carcinogenic human metabolites. FGA25N120 datasheet, cross reference, circuit and application notes in pdf format. This hotel was basically very nice - modern, clean aspect. If your design calls for a high-efficiency, fast-switching device, MOSFETs should be chosen over IGBTs. FGA25N120FTD-Fairchild-Semiconductor-datasheet-8630906.pdf, FGA25N120FTD-Fairchild-Semiconductor-datasheet-10732717.pdf. So if you design requires high efficiency and faster switching device then you should prefer MOSFETs over IGBT. Max. Equivalent Type Designator: FGA25N120ANTD Type: IGBT Type of IGBT Channel: N-Channel Maximum Collector-Emitter Voltage |Vce|, V: 1200 Maximum Collector Current |Ic| @25, A: 25 Collector-Emitter saturation Voltage |VCE (sat)|, typ, V: 2 Package: TO3PN This means that an IGBT is simply a MOSFET with a BJT on the output side to take advantage of the advantages of both a MOSFET and a BJT. 2011 Jul;14(6):548-458. doi: 10.2174/138620711795767857. Fully renovated room located on the fourth floor of the building with high quality finishes. It has an interesting restaurant where guests can enjoy tasty international cuisine and 3 large rooms for organising all kinds of events. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail. Renner S, van Otterlo WA, Dominguez Seoane M, Mcklinghoff S, Hofmann B, Wetzel S, Schuffenhauer A, Ertl P, Oprea TI, Steinhilber D, Brunsveld L, Rauh D, Waldmann H. Nat Chem Biol.
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